Ion source metal-rac fault current protection circuitDEVRIES, G. J; LIETZKE, A. F; VAN OS, C. F. A et al.Review of scientific instruments. 1991, Vol 62, Num 12, pp 3098-3099, issn 0034-6748Article

Low Ohm resistor series for optimum performance in high voltage surge applicationsBARKER, M. F.Microelectronics international. 1997, Vol 43, Num MAI, pp 22-24, issn 1356-5362, 5 p.Article

Integration of an SCR in an active clampREYNDERS, K; MOENS, P.Microelectronics and reliability. 2007, Vol 47, Num 7, pp 1054-1059, issn 0026-2714, 6 p.Conference Paper

Lightning induced transient voltages in presence of complex structures and nonlinear loadsORLANDI, A.IEEE transactions on electromagnetic compatibility. 1996, Vol 38, Num 2, pp 150-155, issn 0018-9375Article

A new ESD protection concept for VLSI CMOS circuits avoiding circuit stressGUGGENMOS, X; HOLZNER, R.Journal of electrostatics. 1992, Vol 29, Num 1, pp 21-39, issn 0304-3886Conference Paper

Digital measurement and comparison of current-voltage output capability of amplifiers and demands of loudspeakersFAIRWOOD, R. C; REED, M. J.Journal of the Audio Engineering Society. 1991, Vol 39, Num 5, pp 345-355, issn 0004-7554, 11 p.Article

ESD monitor circuit : A tool to investigate the susceptibility and failure mechanisms of the charged device modelEGGER, P; GIESER, H; KROPF, R et al.Quality and reliability engineering international. 1996, Vol 12, Num 4, pp 265-270, issn 0748-8017Conference Paper

40Gb/s amplifier and ESD protection circuit in 0.18μm CMOS technologyGALAL, Sherif; RAZAVI, Behzad.IEEE International Solid-State Circuits Conference. 2004, pp 480-481, isbn 0-7803-8267-6, 2Vol, 2 p.Conference Paper

ESD reliability issues in RF CMOS circuitsRADHAKRISHNAN, M. K; VASSILEV, V; KEPPENS, B et al.SPIE proceedings series. 2002, pp 551-556, isbn 0-8194-4500-2, 2VolConference Paper

An ESD protection circuit for SOI technology using gate- and body-biased MOSFET'SSALMAN, Akram; MITRA, Souvick; IOANNOU, Dimitris E et al.IEEE International SOI conference. 2002, pp 45-46, isbn 0-7803-7439-8, 2 p.Conference Paper

1997 Symposium on electrical overstress/electrostatic discharge (EOS/ESD)STOJADINOVIC, N. D; PECHT, M. G; VERHAEGE, Koen G et al.Microelectronics and reliability. 1998, Vol 38, Num 11, issn 0026-2714, 156 p.Conference Proceedings

Quench circuit for electronic instruments used with superconducting magnetsBENSON, R. G; GOLDFARB, R. B; PITTMAN, E. S et al.Cryogenics (Guildford). 1986, Vol 26, Num 8, pp 482-483, issn 0011-2275Article

A novel control strategy for a braking resistorDAS, B; GHOSH, A; SACHCHIDANAND et al.Electrical power & energy systems. 1998, Vol 20, Num 6, pp 391-403, issn 0142-0615Article

The impact of MOSFET technology evolution and scaling on electrostatic discharge protectionVOLDMAN, S. H.Microelectronics and reliability. 1998, Vol 38, Num 11, pp 1649-1668, issn 0026-2714Conference Paper

Protection of photomultipliers from overloadAPLIN, P. S.Measurement science & technology (Print). 1997, Vol 8, Num 3, pp 340-342, issn 0957-0233Article

Action of electromagnetic fields on safety systemsVIKHAREV, A. P; GOLGOVSKIKH, A. V.Russian electrical engineering. 1997, Vol 68, Num 1, pp 16-20, issn 1068-3712Article

Complementary-SCR ESD protection circuit with interdigitated finger-type layout for input pads of submicron CMOS IC'sMING-DOU KER; CHUNG-YU WU.I.E.E.E. transactions on electron devices. 1995, Vol 42, Num 7, pp 1297-1304, issn 0018-9383Article

electrical overstress (EOS) power profiles: a guideline to qualify EOS hardness of semiconductor devicesDIAZ, C; SUNG-MO KANG; DUVVURY, C et al.Journal of electrostatics. 1993, Vol 31, Num 2-3, pp 161-176, issn 0304-3886Conference Paper

Methods of achieving certain protective functions in radio-electronic equipment power suppliesLEVINZON, S. V.Telecommunications & radio engineering. 1992, Vol 47, Num 10, pp 151-156, issn 0040-2508Article

Numerical study of the short pre-arcing time in high breaking capacity fuses via an enthalpy formulationROCHETTE, David; TOUZANI, Rachid; BUSSIERE, William et al.Journal of physics. D, Applied physics (Print). 2007, Vol 40, Num 15, pp 4544-4551, issn 0022-3727, 8 p.Article

The amplifier input protection circuit for a intraoperative evoked potential monitoring systemKROIS, I; ISGUM, V; CIFREK, M et al.Mediterranean electrotechnical conference. 2004, isbn 0-7803-8271-4, 3Vol, Vol.1, 75-78Conference Paper

On-chip ESD protection design for integrated circuits : an overview for IC designersWANG, A. Z; FENG, H. G; GONG, K et al.Microelectronics journal. 2001, Vol 32, Num 9, pp 733-747, issn 0959-8324Article

CONCEPTION, REALISATION ET CARACTERISATION D'UN COMPOSANT LIMITEUR DE COURANT EN CARBURE DE SILICIUM = CONCEPTION, REALISATION AND CHARACTERISATION OF A SILICON CARBIDE CURRENT LIMITING DEVICENallet, Franck; Planson, Dominique.2001, 194 p.Thesis

A new CDM test method and protective circuits against the excessive mobile chargeSUZUKI, K; MURANOI, T; SUGITA, R et al.Semiconductor science and technology. 1998, Vol 13, Num 10, pp 1065-1070, issn 0268-1242Article

Electrostatic discharge (ESD) protection for CMOS output buffers in scaled-down VLSI technologyKER, M.-D.Microelectronics and reliability. 1998, Vol 38, Num 4, pp 619-639, issn 0026-2714Article